Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs

dc.contributor.authorMARTIN M. J.
dc.contributor.authorRENGEL R.
dc.contributor.authorGALEOTE J. M.
dc.contributor.authorMichelly De Souza
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T22:03:30Z
dc.date.available2022-01-12T22:03:30Z
dc.date.issued2011-02-11
dc.description.abstractIn this paper a Monte Carlo investigation of Graded Channel (GC) Silicon-On-Insulator MOSFETs is presented. The influence of the length of the lightly-doped region of the channel (LLD) on the microscopic transport properties is exhaustively analyzed. Result show that increasing LLD provides an enhancement of the device performance in terms of drain current and transconductance. However, for LLD values larger than half of the channel the benefits are minimized from a microscopic point of view due to the increasing tendency of the device to behave as a lightly doped conventional transistor. This suggests the existence of an optimum L LD value to fully benefit from the improvements provided by GC doping techniques. © 2011 IEEE.
dc.identifier.citationMARTIN M. J.; RENGEL R.; GALEOTE J. M.; DE SOUZA, M.; PAVANELLO, M. A. Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs. Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011. Fev. 2011.
dc.identifier.doi10.1109/SCED.2011.5744179
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4208
dc.relation.ispartofProceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
dc.rightsAcesso Restrito
dc.subject.otherlanguageFully Depleted SOI
dc.subject.otherlanguageGraded Channel MOSFET
dc.subject.otherlanguagemicroscopic transport
dc.subject.otherlanguageMonte Carlo simulation
dc.titleMonte Carlo simulation of graded-channel fully depleted SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-79955742630
fei.scopus.subjectConventional transistors
fei.scopus.subjectDevice performance
fei.scopus.subjectDoping techniques
fei.scopus.subjectFully depleted SOI
fei.scopus.subjectGraded channel MOSFET
fei.scopus.subjectGraded channels
fei.scopus.subjectMicroscopic points
fei.scopus.subjectmicroscopic transport
fei.scopus.subjectMONTE CARLO
fei.scopus.subjectMonte Carlo Simulation
fei.scopus.subjectSilicon-on-insulator MOSFETs
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79955742630&origin=inward
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