Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA

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dc.contributor.authorTonfat J.
dc.contributor.authorKastensmidt F.L.
dc.contributor.authorArtola L.
dc.contributor.authorHubert G.
dc.contributor.authorMedina N.H.
dc.contributor.authorAdded N.
dc.contributor.authorAguiar V.A.P.
dc.contributor.authorAguirre F.
dc.contributor.authorMacchione E.L.A.
dc.contributor.authorSilveira M.A.G.
dc.date.accessioned2019-08-19T23:47:20Z
dc.date.available2019-08-19T23:47:20Z
dc.date.issued2017
dc.description.abstract© 1963-2012 IEEE.This paper shows the impact of low linear energy transfer heavy ions on the reliability of 28-nm Bulk static random access memory (RAM) cells from Artix-7 field-programmable gate array. Irradiation tests on the ground showed significant differences in the multiple bit upset cross section of configuration RAM and block RAM memory cells under various angles of incidence and rotation of the device. Experimental data are analyzed at transistor level by using the single-event effect prediction tool called multiscale single-event phenomenon prediction platform coupled with SPICE simulations.
dc.description.firstpage2161
dc.description.issuenumber8
dc.description.lastpage2168
dc.description.volume64
dc.identifier.citationTONFAT, JORGE; SILVEIRA, MARCILEI A. G.; KASTENSMIDT, FERNANDA LIMA; ARTOLA, LAURENT; HUBERT, GUILLAUME; MEDINA, NILBERTO H.; ADDED, NEMITALA; AGUIAR, VITOR A. P.; AGUIRRE, FERNANDO; MACCHIONE, EDUARDO L. A.. Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-based FPGA. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v. PP, p. 1-1, 2017.
dc.identifier.doi10.1109/TNS.2017.2727479
dc.identifier.issn0018-9499
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1471
dc.relation.ispartofIEEE Transactions on Nuclear Science
dc.rightsAcesso Restrito
dc.subject.otherlanguageField-programmable gate array (FPGA)
dc.subject.otherlanguagelayout analysis
dc.subject.otherlanguagemultiple bit upset (MBU)
dc.subject.otherlanguagesingle-event effects (SEEs)
dc.subject.otherlanguagesoft errors
dc.titleAnalyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA
dc.typeArtigo
fei.scopus.citations27
fei.scopus.eid2-s2.0-85028856429
fei.scopus.subjectLayout analysis
fei.scopus.subjectSensitivity
fei.scopus.subjectSingle event effects
fei.scopus.subjectSoft error
fei.scopus.subjectSRAM Cell
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85028856429&origin=inward
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