Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA
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27
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Artigo
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2017
Autores
Tonfat J.
Kastensmidt F.L.
Artola L.
Hubert G.
Medina N.H.
Added N.
Aguiar V.A.P.
Aguirre F.
Macchione E.L.A.
Silveira M.A.G.
Kastensmidt F.L.
Artola L.
Hubert G.
Medina N.H.
Added N.
Aguiar V.A.P.
Aguirre F.
Macchione E.L.A.
Silveira M.A.G.
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IEEE Transactions on Nuclear Science
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TONFAT, JORGE; SILVEIRA, MARCILEI A. G.; KASTENSMIDT, FERNANDA LIMA; ARTOLA, LAURENT; HUBERT, GUILLAUME; MEDINA, NILBERTO H.; ADDED, NEMITALA; AGUIAR, VITOR A. P.; AGUIRRE, FERNANDO; MACCHIONE, EDUARDO L. A.. Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-based FPGA. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v. PP, p. 1-1, 2017.
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© 1963-2012 IEEE.This paper shows the impact of low linear energy transfer heavy ions on the reliability of 28-nm Bulk static random access memory (RAM) cells from Artix-7 field-programmable gate array. Irradiation tests on the ground showed significant differences in the multiple bit upset cross section of configuration RAM and block RAM memory cells under various angles of incidence and rotation of the device. Experimental data are analyzed at transistor level by using the single-event effect prediction tool called multiscale single-event phenomenon prediction platform coupled with SPICE simulations.