A compact model and an extraction method for the FinFET spreading resistance
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2
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Data
2011-09-02
Autores
Marcelo Parada
MALHEIRO, C. T.
AGOPIAN, P. G. D.
Renato Giacomini
MALHEIRO, C. T.
AGOPIAN, P. G. D.
Renato Giacomini
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Periódico
ECS Transactions
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PARADADA, M.; MALHEIRO, C. T.; AGOPIAN, P. G. D.; GIACOMINI, R. A compact model and an extraction method for the FinFET spreading resistance. ECS Transactions, v. 39, n. 1, p. 255-262, September, 2011.
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This work presents a study of the FinFET series resistance focused on the spreading component. A new simple analytical expression is proposed to easily estimate and model this parasitic parameter. The extraction method departs from the drain current versus gate voltage curves of several channel and source/drain lengths. The resistance values extracted from simulated devices are compared to the outputs of the analytic model and a very good agreement is achieved. The proposed model showed accurate estimative for a wider range of devices then previously published models. © The Electrochemical Society.