Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K
N/D
Tipo de produção
Artigo
Data de publicação
2022-08-05
Texto completo (DOI)
Periódico
Solid-State Electronics
Editor
Texto completo na Scopus
Citações na Scopus
5
Autores
MARINIELLO, G.
BARRAUD, S.
VINET, M.
CASSE, M.
FAYNOT, O.
CALCADE, J.
Marcelo Antonio Pavanello
Orientadores
Resumo
© 2022 Elsevier LtdThis paper aims at analyzing the electrical characteristics of n-type vertically stacked nanowires with variable fin width, operating in the temperature range of 300–600 K. Basic electrical parameters, such as threshold voltage, subthreshold slope, and carrier mobility are extracted in the linear region, whereas the transconductance, output conductance, and intrinsic voltage gain are extracted in saturation, to access some of device's analog figures of merit. Also, it has been analyzed the DIBL, GIDL, Ion, and Ioff. currents.
Citação
MARINIELLO, G.; BARRAUD, S.; VINET, M.; CASSE, M.; FAYNOT, O.; CALCADE, J.; PAVANELLO, M. A. Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K. Solid-State Electronics, v. 194, August, 2022.
Palavras-chave
Keywords
DIBL; High temperature; Vertically stacked nanowires
Assuntos Scopus
DIBL; Electrical characteristic; Electrical parameter; Fin widths; Highest temperature; Linear region; Output conductance; Subthreshold slope; Temperature range; Vertically stacked nanowire