The wave SOI MOSFET: A new accuracy transistor layout to improve drain current and reduce die area for current drivers applications

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dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T22:04:25Z
dc.date.available2022-01-12T22:04:25Z
dc.date.issued2009-05-29
dc.description.abstractThis paper proposes a new transistor layout, called here simply as Wave, that can be used for any technology, to improve the current driver and enhanced layout packing with respect to Multifinger and Waffle structures, regarding the same geometric factor Discussions about this novel layout approach are performed regarding matching, avalanche and electro static discharge. To verify the benefits of the Wave structure, a comparison with a Multifinger and Waffle is carried out. Defining a figure-of-merit as integration factor [(W/L)/A], the Wave features a better efficiency than Multifinger and Waffle layouts, as 35.9 % and 28.1% respectively. The Wave approach allows a saving of 26.1 % and 21.8% in the power SOI MOSFET size as compared to Multifinger and Waffle layouts. ©The Electrochemical Society.
dc.description.firstpage153
dc.description.issuenumber4
dc.description.lastpage158
dc.description.volume19
dc.identifier.citationGIMENEZ, S. The wave SOI MOSFET: A new accuracy transistor layout to improve drain current and reduce die area for current drivers applications. ECS Transactions, v. 19, n. 4, p. 153-158, Mayo 2009.
dc.identifier.doi10.1149/1.3117404
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4270
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleThe wave SOI MOSFET: A new accuracy transistor layout to improve drain current and reduce die area for current drivers applications
dc.typeArtigo de evento
fei.scopus.citations17
fei.scopus.eid2-s2.0-74949111412
fei.scopus.subjectCurrent drivers
fei.scopus.subjectDie area
fei.scopus.subjectFigure of merit
fei.scopus.subjectGeometric factors
fei.scopus.subjectIntegration factor
fei.scopus.subjectMultifingers
fei.scopus.subjectSOI-MOSFETs
fei.scopus.subjectWave approach
fei.scopus.subjectWave features
fei.scopus.subjectWave structures
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=74949111412&origin=inward
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