Back bias influence on low-frequency noise of n-type nanowires SOI MOSFETs

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dc.contributor.authorMOLTO, A. R.
dc.contributor.authorPAZ. B. C.
dc.contributor.authorRodrido Doria
dc.contributor.authorMichelly De Souza
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:56:30Z
dc.date.available2022-01-12T21:56:30Z
dc.date.issued2019-02-11
dc.description.abstract© 2018 IEEE.This work presents the influence of back (substrate) bias on the low-frequency noise of fully depleted inversion mode n-FET nanowire transistors with different fin widths. Several gate voltage overdrives were applied (from 0mV to 200mV) with devices working in linear regime. The results showed a noise increase for both positive and negative substrate biases (Vsub) and the changing of γ , from 0.9 with zero back bias down to 0.4 for Vsub = -40V. The results obtained for device with channel length of 1 μ m and fin width of 15nm show a decrease of the spectral noise density with the gate voltage overdrive increase for frequencies below 100Hz, which is characterized by mobility mechanism influence at the power spectrum density noise. It was also possible to see in these devices that the generation and recombination noise with decay of 1/f2 overlaps the 1/f γnoise for frequencies above 100Hz. It was also possible to see the noise increase with Wfin decrease as expected.
dc.identifier.citationMOLTO, A. R.; PAZ. B. C.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A. Back bias influence on low-frequency noise of n-type nanowires SOI MOSFETs. 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018, Feb. 2019.
dc.identifier.doi10.1109/S3S.2018.8640178
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3729
dc.relation.ispartof2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageBack bias
dc.subject.otherlanguageFully depleted SOI
dc.subject.otherlanguageLow-frequency noise
dc.subject.otherlanguageNanowire
dc.titleBack bias influence on low-frequency noise of n-type nanowires SOI MOSFETs
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85063163137
fei.scopus.subjectBack bias
fei.scopus.subjectFully depleted SOI
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectMobility mechanisms
fei.scopus.subjectNanowire transistors
fei.scopus.subjectNegative substrates
fei.scopus.subjectPower spectrum density
fei.scopus.subjectSpectral noise densities
fei.scopus.updated2024-09-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85063163137&origin=inward
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