Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45 rotated substrates

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dc.contributor.authorDoria R.T.
dc.contributor.authorMartino J.A.
dc.contributor.authorSimoen E.
dc.contributor.authorClaeys C.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:11Z
dc.date.available2019-08-19T23:45:11Z
dc.date.issued2013
dc.description.abstractThis paper studies the impact of the 45 substrate rotation on the low-frequency noise (LFN) of triple gate nFinFETs. The overall LFN has been extracted for both standard and 45 substrate rotated devices of several fin widths at different drain and gate voltage biases focusing on their operation in saturation regime. A general view of the mechanisms which govern the low-frequency noise in MOS devices is provided and a brief discussion on the physical origins of the LFN in the evaluated devices is carried out. It has been noted that the LFN in non-rotated (0 rotated) and 45 rotated devices operating in the linear regime shows 1/f behavior independent on the gate bias, whereas in the saturation regime both 1/f and Lorentzian (1/f2) noises are observed. The former one prevails at lower frequencies and the 1/f2 noise at higher ones. In this case, the corner frequency shows an exponential dependence on the gate bias. © 2013 Elsevier Ltd. All rights reserved.
dc.description.firstpage121
dc.description.lastpage126
dc.description.volume90
dc.identifier.citationDoria, Rodrigo Trevisoli; MARTINO, J. A.; SIMOEN, Eddy; CLAEYS, Cor; PAVANELLO, Marcelo A.;PAVANELLO, M. A.;PAVANELLO, M.;PAVANELLO, M.A.;PAVANELLO, MARCELO;ANTONIO PAVANELLO, MARCELO. Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates. Solid-State Electronics, v. 90, p. 121-126, 2013.
dc.identifier.doi10.1016/j.sse.2013.02.042
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1114
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguage1/f Noise
dc.subject.otherlanguageFinFET
dc.subject.otherlanguageLorentzian noise
dc.subject.otherlanguageLow-frequency noise
dc.subject.otherlanguageSilicon-on-insulator
dc.titleLow-frequency noise of n-type triple gate FinFETs fabricated on standard and 45 rotated substrates
dc.typeArtigo
fei.scopus.citations5
fei.scopus.eid2-s2.0-84887447018
fei.scopus.subject1/F noise
fei.scopus.subjectExponential dependence
fei.scopus.subjectFinFET
fei.scopus.subjectLorentzian noise
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectLower frequencies
fei.scopus.subjectSaturation regime
fei.scopus.subjectSubstrate rotation
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84887447018&origin=inward
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