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New method for individual electrical characterization of stacked SOI nanowire MOSFETs

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dc.contributor.authorPAZ, B.C.
dc.contributor.authorCASSE, M.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorREIMBOLD, G.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:57:27Z
dc.date.available2022-01-12T21:57:27Z
dc.date.issued2017-10-18
dc.description.abstractA new systematic procedure to separate the electrical characteristics of advanced stacked nanowires (NWs) with emphasis on mobility extraction is presented. The proposed method is based on I-V measurements varying the back gate bias (VB) and consists of three basic main steps, accounting for VB influence on transport parameters. Lower mobility was obtained for the top GAA NW in comparison to bottom Q-NW. Temperature dependence of carrier mobility is also studied through the proposed method up to 150°C.
dc.description.firstpage1
dc.description.lastpage3
dc.description.volume2018-March
dc.identifier.citationPAZ, B.C.; CASSE, M.; BARRAUD, S.; REIMBOLD, G.; VINET, M.; FAYNOT, O.; PAVANELLO, M. A. New method for individual electrical characterization of stacked SOI nanowire MOSFETs. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, p.1-3, 2018.
dc.identifier.doi10.1109/S3S.2017.8309237
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3794
dc.relation.ispartof2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
dc.rightsAcesso Restrito
dc.subject.otherlanguageBack gate bias
dc.subject.otherlanguageMobility
dc.subject.otherlanguageSOI
dc.subject.otherlanguageStacked nanowires
dc.titleNew method for individual electrical characterization of stacked SOI nanowire MOSFETs
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-85047738419
fei.scopus.subjectBack-gate bias
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectI-V measurements
fei.scopus.subjectMobility extraction
fei.scopus.subjectNanowire MOSFETs
fei.scopus.subjectTemperature dependence
fei.scopus.subjectTransport parameters
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85047738419&origin=inward

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