Experimental validation of the drain current analytical model of the fully depleted diamond SOI nMOSFETs by using paired t-test statistical evaluation

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dc.contributor.authorPERUZZI, V. V.
dc.contributor.authorRENAUX, C.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T22:02:44Z
dc.date.available2022-01-12T22:02:44Z
dc.date.issued2012-09-02
dc.description.abstractThe focus of this work is to validate the drain current analytical model of the Fully Depleted Diamond SOI nMOSFETs, by applying the paired t-test statistical evaluation with experimental data of the six different samples of integrated circuits containing different Diamond SOI MOSFETs and Conventional ones counterparts. Two parameters are considered in this work: maximum transconductance and saturation drain current. We observe that, for the most cases (worst case is around 85% of the repeatability for the saturation drain current), the Diamond drain current analytical model is capable to reproduce a similar statistical behavior than the one observed for the conventional SOI nMOSFET counterpart, considering the same bias conditions and SOI CMOS manufacturing process of the integrated circuits. © The Electrochemical Society.
dc.description.firstpage169
dc.description.issuenumber1
dc.description.lastpage176
dc.description.volume49
dc.identifier.citationPERUZZI, V. V.; RENAUZ, C.; RENAUX, C.; FLANDRE, D. GIMEMEZ, S. Experimental validation of the drain current analytical model of the fully depleted diamond SOI nMOSFETs by using paired t-test statistical evaluation. ECS Transactions, v. 49, n. 1, p. 169-176, Sept. 2012.
dc.identifier.doi10.1149/04901.0169ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4156
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleExperimental validation of the drain current analytical model of the fully depleted diamond SOI nMOSFETs by using paired t-test statistical evaluation
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-84875859570
fei.scopus.subjectBias conditions
fei.scopus.subjectExperimental validations
fei.scopus.subjectFully depleted
fei.scopus.subjectMaximum transconductance
fei.scopus.subjectSaturation drain current
fei.scopus.subjectStatistical behavior
fei.scopus.subjectStatistical evaluation
fei.scopus.subjectTwo parameter
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84875859570&origin=inward
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