Effective mobility analysis of n- and p-types SOI junctionless nanowire transistors

Página do item simplificado
dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorRodrido Doria
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorMichelly De Souza
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:00:27Z
dc.date.available2022-01-12T22:00:27Z
dc.date.issued2014-10-29
dc.description.abstractThis paper reports the behavior of the effective mobility of n- and p-type SOI Trigate Junctionless Nanowire Transistors with different doping concentrations and channel widths down to 20 nm-wide devices. It is shown that the mobility of extremely narrow devices can overcome the bulk silicon mobility independently of the device type. The increase in the maximum mobility observed in narrow devices seems to be more pronounced for heavier doped devices.
dc.identifier.citationDORIA, R.; TREVISOLI, R.; DE SOUZA, M.; PAVANELLO, M. A. Effective mobility analysis of n- and p-types SOI junctionless nanowire transistors. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Oct. 2014.
dc.identifier.doi10.1109/SBMicro.2014.6940108
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4001
dc.relation.ispartof2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
dc.rightsAcesso Restrito
dc.subject.otherlanguageEffective Mobility
dc.subject.otherlanguageJunctionless Transistors
dc.subject.otherlanguageSilicon-on-Insulator
dc.titleEffective mobility analysis of n- and p-types SOI junctionless nanowire transistors
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-84912106646
fei.scopus.subjectBulk silicon
fei.scopus.subjectChannel widths
fei.scopus.subjectDoped devices
fei.scopus.subjectDoping concentration
fei.scopus.subjectEffective mobilities
fei.scopus.subjectJunctionless transistors
fei.scopus.subjectNanowire transistors
fei.scopus.subjectTrigate
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84912106646&origin=inward
Arquivos
Coleções
Artigos