Analysis of the scattering mechanisms in the accumulation layer of junctionless nanowire transistors at high temperature

Abstract

© 2019 IEEE.This work studies the effects of high temperature on the scattering mechanisms of Junctionless Nanowire Transistors with several fin width from nanowire to quasi-planar devices. With the variation of the temperature it was possible to analyze the impact of the scattering mechanisms on the devices. For nanowire devices at room temperature a degradation of up to 19% was seen from the maximum mobility to the mobility at higher gate bias to around 15% at 500K, while quasi-planar devices show a degradation of around 12% for all temperatures. Further analysis shows that the impact of the surface roughness for nanowires increase the degradation of these devices, where a reduction of its degradation at higher temperature shows the phonon scattering as the main scattering mechanism.