Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature

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dc.contributor.authorMOLTO, A. R.
dc.contributor.authorRodrigo Doria
dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:58:39Z
dc.date.available2022-01-12T21:58:39Z
dc.date.issued2016-08-29
dc.description.abstractThis work presents, for the first time, the Low Frequency Noise (LFN) of submicron graded-channel (GC) SOI nMOSFETs as a function of temperature in the range from 300 K up to 500 K. The measured GC SOI devices are from a 150 nm commercial technology from OKI Semiconductors. The results were obtained through experimental measurements in a device with channel length (L) of 240 nm, working in linear regime at VDS=50mV. It is shown that the origin of the noise changes from carrier number fluctuations to mobility fluctuations as the temperature is increased. Additionally, the generation and recombination noise plays a significant role on the overall noise with the temperature rise.
dc.identifier.citationMOLTO, A. R.; DORIA, R.; DE SOUZA, M.; FLANDRE, D; PAVANELLO, M. A. Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, 2016.
dc.identifier.doi10.1109/SBMicro.2016.7731319
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3876
dc.relation.ispartofSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
dc.rightsAcesso Restrito
dc.subject.otherlanguageGC SOI
dc.subject.otherlanguageLow Frequency Noise (LFN)
dc.subject.otherlanguageSubmicron
dc.subject.otherlanguageTemperature
dc.titleLow-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85007358320
fei.scopus.subjectCarrier number fluctuation
fei.scopus.subjectCommercial technology
fei.scopus.subjectGC SOI
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectMobility fluctuations
fei.scopus.subjectRecombination noise
fei.scopus.subjectSubmicron
fei.scopus.subjectTemperature rise
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85007358320&origin=inward
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