Experimental Demonstration of Ω-Gate SOI Nanowire MOS Transistors' Mobility Variation Induced by Substrate Bias
N/D
Tipo de produção
Artigo
Data de publicação
2022
Texto completo (DOI)
Periódico
IEEE Transactions on Electron Devices
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
BERMAMASCHI, F. E.
RIBEIRO, T. A.
PAZ, B. C.
Michelly De Souza
BARRAUD, S.
CASSE, M.
VINET, M.
FAYNOT, O.
Marcelo Antonio Pavanello
Orientadores
Resumo
© 1963-2012 IEEE.This work investigates the carrier mobility variation in Ω-gate silicon-on-insulator (SOI) nanowire MOS transistors induced by substrate (or back) biasing. The analysis is carried out through experimental measurements and 3-D TCAD simulation, performed in n-type devices with variable fin width. Mobility enhancement is observed for lower back bias levels, due to the initial conduction through the Si-BOX interface, which presents higher mobility, prior to the activation of the front channel. As back bias is increased, however, the strong substrate-induced electric field in the back channel (BC) is responsible for worsening scattering mechanisms in the BC, such as surface roughness and acoustic phonon scattering, inducing mobility degradation. The effect is amplified as the fin width increases. For short-channel devices, the use of back bias was more beneficial for mobility due to a stronger mobility enhancement and lower mobility degradation.
Citação
BERMAMASCHI, F. E.; RIBEIRO, T. A.; PAZ, B. C.; DE SOUZA, M.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOT, O.; PAVANELLO, M. A. Experimental demonstration of ω-gate soi nanowire mos transistors' mobility variation induced by substrate bias. IEEE Transactions on Electron Devices, v. 69, n. 7, march, 2022.
Palavras-chave
Keywords
Carrier mobility; nanowire MOS transistor; substrate bias
Assuntos Scopus
Back bias; Fin widths; Mobility enhancement; Mobility variation; MOS-FET; MOSFETs; Nanowire MOS transistor; Silicon on insulator; Substrate bias; Substrate bias.