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X-ray radiation effects in overlapping circular-gate MOSFET's

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dc.contributor.authorDE LIMA, J. A.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorCIRNE, K. H.
dc.contributor.authorRoberto Santos
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4395-8078
dc.date.accessioned2022-01-12T22:03:06Z
dc.date.available2022-01-12T22:03:06Z
dc.date.issued2011-09-23
dc.description.abstractIV-characteristics from ELT Overlapping Circular-Gate Transistors (O-CGT's) and rectangular-gate transistors are cross-checked after X-ray exposure. No degradation on O-CGT subthreshold behavior observed for doses up to 2.3 Grad. Devices were prototyped on standard 0.35 μm CMOS process. © 2011 IEEE.
dc.description.firstpage88
dc.description.lastpage91
dc.identifier.citationDE LIMA, J. A.; GUAZZELLI, M. A.; CIRNE, K. H.; SANTOS, R. B. B.; MEDINA, N. H. X-ray radiation effects in overlapping circular-gate MOSFET's. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. p. 88-91, Sept. 2011.
dc.identifier.doi10.1109/RADECS.2011.6131374
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4181
dc.relation.ispartofProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
dc.rightsAcesso Restrito
dc.subject.otherlanguageelectronic devices
dc.subject.otherlanguageleakage current
dc.subject.otherlanguageMOSFET
dc.subject.otherlanguageradiation effects
dc.subject.otherlanguageTotal Ionizing Dose (TID)
dc.subject.otherlanguageX-ray
dc.titleX-ray radiation effects in overlapping circular-gate MOSFET's
dc.typeArtigo de evento
fei.scopus.citations12
fei.scopus.eid2-s2.0-84860210508
fei.scopus.subjectCMOS processs
fei.scopus.subjectElectronic device
fei.scopus.subjectMOS-FET
fei.scopus.subjectSub-threshold behavior
fei.scopus.subjectTotal Ionizing Dose
fei.scopus.subjectX-ray exposure
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84860210508&origin=inward

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