Experimental Comparison of Junctionless and Inversion-Mode Nanowire MOSFETs Electrical Properties at High Temperatures
N/D
Tipo de produção
Artigo de evento
Data de publicação
2022-08-22
Texto completo (DOI)
Periódico
36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
PRATES, R. R.
BARRAUD, S.
CASSE, M.
VINET, M.
FAYNOT, O.
Marcelo Antonio Pavanello
Orientadores
Resumo
© 2022 IEEE.This work aims to present the electrical properties of junctionless and inversion-mode nanowires MOSFETs in the temperature range from 300 K to 580 K. Devices with different fin widths are compared. The comparison is performed using experimental data looking for some of the fundamental electrical parameters of these transistors such as threshold voltage, inverse subthreshold slope, current, and carrier mobility over the temperature.
Citação
PRATES, R. R.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOT, O.; PAVANELLO, M. A. Experimental Comparison of Junctionless and Inversion-Mode Nanowire MOSFETs Electrical Properties at High Temperatures. 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings, aug. 2022.
Palavras-chave
Keywords
electrical characteristics; inversion-mode; junctionless; temperature
Assuntos Scopus
Electrical characteristic; Electrical parameter; Experimental comparison; Fin widths; Highest temperature; Inverse subthreshold slopes; Inversion modes; Junctionless; Nanowire MOSFETs; Temperature range