TCAD SIMULATION OF SINGLE EVENT EFFECTS ON ELECTRONIC DEVICES

Página do item simplificado
dc.contributor.authorBÜHLER, Rudolf Theoderich
dc.contributor.authorNOVO, C.
dc.contributor.authorPERIN, A. L.
dc.contributor.authorMilene Galeti
dc.contributor.authorPEREIRA, C. F.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorGiacomini, R.
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-7934-9605
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-2709-1734
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-11-01T06:04:08Z
dc.date.available2022-11-01T06:04:08Z
dc.date.issued2022-01-05
dc.description.abstract© 2022 Institute of Physics Publishing. All rights reserved.In this paper, lateral bulk PIN photodiodes designed at FEI University and SOI (Silicon-on-Insulator) PIN photodiodes from UCL are analyzed as photodetectors and SEE (Single Event Effects) sensors. Numerical simulations are used for radiation analysis of heavy ion striking the PIN photodiode using the parameters extracted by real measurements in a non-radiation condition. The occurrence of SEE near-Earth natural environment is unpredictable and is a serious threat that can lead to malfunctions of microprocessors, memory banks and devices that are vital to the correct behavior of a low-orbit or avionic mission. Detecting their occurrence and monitoring the energetic particles in radiation environments is vital and this paper investigates the consequence of SEE on lateral PIN photodiodes through experimentally calibrated TCAD numerical simulations.
dc.description.issuenumber1
dc.description.volume2340
dc.identifier.citationBÜHLER, R. T.; NOVO, C.; PERIN, A. L.; GALETI, M.; PEREIRA, C. F.; GUAZZELLI, M. A.; GIACOMINI, R. Tcad simulation of single event effects on electronic devices. Journal of Physics: Conference Series, v. 2340, n. 1, 2022.
dc.identifier.doi10.1088/1742-6596/2340/1/012047
dc.identifier.issn1742-6596
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4617
dc.relation.ispartofJournal of Physics: Conference Series
dc.rightsAcesso Aberto
dc.rights.licenseCreative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative commons (CC BY 4.0). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85140242519&origin=inward. Acesso em 09 dez. 2022.
dc.titleTCAD SIMULATION OF SINGLE EVENT EFFECTS ON ELECTRONIC DEVICES
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85140242519
fei.scopus.subjectElectronics devices
fei.scopus.subjectMicroprocessor memory
fei.scopus.subjectNatural environments
fei.scopus.subjectNear-Earth
fei.scopus.subjectRadiation analysis
fei.scopus.subjectRadiation condition
fei.scopus.subjectReal measurements
fei.scopus.subjectSilicon on insulator
fei.scopus.subjectSingle event effects
fei.scopus.subjectTCAD simulation
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85140242519&origin=inward
Arquivos
Pacote Original
Agora exibindo 1 - 1 de 1
Nenhuma Miniatura disponível
Nome:
Buhler_pdf
Tamanho:
2.75 MB
Formato:
Adobe Portable Document Format
Baixar
Coleções
Artigos