Biaxial + uniaxial stress effectiveness in tri-gate SOI nMOSFETs with variable fin dimensions
N/D
Tipo de produção
Artigo de evento
Data de publicação
2012-10-04
Texto completo (DOI)
Periódico
Proceedings - IEEE International SOI Conference
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
BÜHLER, Rudolf Theoderich
Agopian P.G.D.
Simoen E.
Claeys C.
Martino J.A.
Orientadores
Resumo
MuGFET devices show good gate-to-channel control, reducing short channel effects and increased current drive [1] and their performance can be improved through implementation of mechanical stress in the silicon fin. In th is wor k we study t he stress distr ibution and transconductance behavior in unstrained and biaxially + uniaxially strained tri-gate SOI nMOSFETs with different fin dimensions through electrical characterization of experimental devices and 3D process and device numerical simulation. Experimental results of standard and strained devices were used to validate the simulations. The bi+uni stress technique delivered enhanced maximum transconductance. © 2012 IEEE.
Citação
Palavras-chave
Keywords
Assuntos Scopus
3D process; Current drives; Electrical characterization; Experimental devices; Fin dimensions; Maximum transconductance; Mechanical stress; Short-channel effect; SOI n-MOSFETs; Trigate; Uniaxial stress