Biaxial + uniaxial stress effectiveness in tri-gate SOI nMOSFETs with variable fin dimensions

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dc.contributor.authorBÜHLER, Rudolf Theoderich
dc.contributor.authorAgopian P.G.D.
dc.contributor.authorSimoen E.
dc.contributor.authorClaeys C.
dc.contributor.authorMartino J.A.
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-7934-9605
dc.date.accessioned2022-01-12T22:02:14Z
dc.date.available2022-01-12T22:02:14Z
dc.date.issued2012-10-04
dc.description.abstractMuGFET devices show good gate-to-channel control, reducing short channel effects and increased current drive [1] and their performance can be improved through implementation of mechanical stress in the silicon fin. In th is wor k we study t he stress distr ibution and transconductance behavior in unstrained and biaxially + uniaxially strained tri-gate SOI nMOSFETs with different fin dimensions through electrical characterization of experimental devices and 3D process and device numerical simulation. Experimental results of standard and strained devices were used to validate the simulations. The bi+uni stress technique delivered enhanced maximum transconductance. © 2012 IEEE.
dc.identifier.doi10.1109/SOI.2012.6404375
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4121
dc.relation.ispartofProceedings - IEEE International SOI Conference
dc.rightsAcesso Restrito
dc.titleBiaxial + uniaxial stress effectiveness in tri-gate SOI nMOSFETs with variable fin dimensions
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-84873543880
fei.scopus.subject3D process
fei.scopus.subjectCurrent drives
fei.scopus.subjectElectrical characterization
fei.scopus.subjectExperimental devices
fei.scopus.subjectFin dimensions
fei.scopus.subjectMaximum transconductance
fei.scopus.subjectMechanical stress
fei.scopus.subjectShort-channel effect
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectTrigate
fei.scopus.subjectUniaxial stress
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84873543880&origin=inward
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