Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs

dc.contributor.authorAGOPIAN P. G. D.
dc.contributor.authorMARTINO, J, A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:04:53Z
dc.date.available2022-01-12T22:04:53Z
dc.date.issued2008
dc.description.abstractThe temperature influence on the gate-induced floating body effect (GIFBE) in fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs is investigated, based on experimental results and two-dimensional numerical simulations. The GIFBE behavior will be evaluated taking into account the impact of carrier recombination and of the effective electric field mobility degradation on the second peak in the transconductance (gm). This floating body effect is also analyzed as a function of temperature. It is shown that the variation of the studied parameters with temperature results in a "C" shape of the threshold voltage corresponding with the second peak in the gm curve. © 2008 Elsevier Ltd. All rights reserved.
dc.description.firstpage1751
dc.description.issuenumber11
dc.description.lastpage1754
dc.description.volume52
dc.identifier.citationAGOPIAN P. G. D.; MARTINO, J, A.; SIMOEN, E.; CLAEYS, C. Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs. Solid-State Electronics, v. 52, n. 11, p. 1751-1754, Nov. 2008.
dc.identifier.doi10.1016/j.sse.2008.07.002
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4301
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageC shape
dc.subject.otherlanguageGate-induced floating body effect
dc.subject.otherlanguageSOI nMOSFETs
dc.subject.otherlanguageTemperature
dc.titleTemperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
dc.typeArtigo
fei.scopus.citations1
fei.scopus.eid2-s2.0-55049139853
fei.scopus.subjectC shape
fei.scopus.subjectCarrier recombinations
fei.scopus.subjectElectric-field
fei.scopus.subjectFloating bodies
fei.scopus.subjectFully depleted
fei.scopus.subjectFully depleted SOI
fei.scopus.subjectGate-induced floating body effect
fei.scopus.subjectNmosfets
fei.scopus.subjectNumerical simulations
fei.scopus.subjectSilicon-on-Insulator
fei.scopus.subjectSOI nMOSFETs
fei.scopus.subjectTemperature influences
fei.scopus.updated2024-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=55049139853&origin=inward
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