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Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs
(2022-07-04) ALVES, C. R.; D'OLIVEIRA, L. M.; Michelly De Souza
© 2022 IEEE.This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied VDS.