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Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs
(2014-05-05) TEIXEIRA, F. F.; BORDALLO, C. C. M.; Marcilei Aparecida Guazzelli; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.
© 2014, Journal of Integrated Circuits and Systems. All rights reserved.In this work, the X-ray irradiation impact on the back gate conduction and drain current for Triple-Gate SOI FinFETs is investigated for strained and unstrained devices. Both types (P and N) of transistors were analyzed. Since X-rays promote trapped positive charges in the buried oxide, the second interface threshold voltage shifts to lower gate voltage. The performance of n-channel devices presented a strong degradation when submitted to X-rays, while for p-channel devices the opposite trend was observed. Two different dose rates were analyzed.