Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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Resultados da Pesquisa
- Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors(2023-10-05) SILVA, L. M. B. DA; Marcelo Antonio Pavanello; CASSÉ, M.; BARRAUD, S.; VINET, M.; FAYNOT, O.; Michelly De Souza© 2023 Elsevier LtdThis work analyzes the influence of source-drain series resistance variability over the drain current in junctionless and inversion mode nanowire transistors. A comparison between drain current and Y-function variability is presented using experimental data of nanowires with different widths and channel lengths. The source-drain series resistance variability is also presented. The results indicates that source-drain series resistance influence is higher on drain current variability for junctionless than inversion mode nanowire transistors.
- On the Application of Junctionless Nanowire Transistors in Basic Analog Building Blocks(2021-01-05) Michelly De Souza; DORIA, R.T.; TREVISOLI, R.; BARRAUD, S.; Marcelo Antonio PavanelloIn this work an evaluation of analog building blocks using junctionless nanowire transistors is presented. This analysis has been carried out through experimental measurements of junctionless nMOS transistors configured as two amplifier stages composed by single transistors, namely the common-source and the common-drain amplifiers. The performance of junctionless devices is evaluated as a function of channel length, nanowire width, doping concentration and bias condition, taking as figures of merit the voltage gain, linearity and, in the case of the common drain amplifier, the input voltage range. The obtained results indicate that these two basic analog blocks can be benefitted by the use of junctionless devices, providing nearly ideal voltage gain when configured as common-drain amplifier, and improvement on voltage gain and linearity with device narrowing in the case of the common-source amplifier.
- Analog characteristics of n-type vertically stacked nanowires(2021) MARINIELLO, G.; CARVALHO, C. A. B. D.; CARDOSO, PAZ, B.; BARRAUD, S.; VINET, M.; FAYNOT, O.; Marcelo Antonio Pavanello© 2021This paper presents the fundamental analog figures of merit, such as the transconductance, output conductance, transconductance over drain current ratio, intrinsic voltage gain and harmonic distortion (or non-linearity), of n-type vertically stacked nanowires with variable fin width and channel length. To have a physical insight on the results, the basic electrical parameters such as threshold voltage, subthreshold slope and low field electron mobility of the analyzed transistors were also studied. The studied analog parameters are presented in function of the transconductance over drain current, to allow for the comparison at the same inversion level.