Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
Navegar
3 resultados
Resultados da Pesquisa
- Fin shape influence on the analog performance of standard and strained MuGFETs(2010-10-14) BÜHLER, Rudolf Theoderich; MARTINO, J. A; AGOPIAN, P. G. D.; Renato Giacomini; SIMOEN, E.; CLAEYS, C.
- Uniaxial stress efficiency for different fin dimensions of triple-gate SOI nMOSFETs(2011-10-06) BÜHLER, Rudolf Theoderich; AGOPIAN, P. G. D.; Renato Giacomini; SIMOEN, E.; CLAEYS, C.; MARTINO, J. A.The stress profiles extracted showed that the variation in the silicon fin dimensions influence the stress levels and distributions along the silicon fin. From the analog performance view, these variations in the stress have influence on some electric parameters. The reduction of the total fin length showed no significant change in the parameters, although a reduction in the stress level was noticed, leading to the conclusion that the shift in the stress level is too small to cause a pronounced impact on the parameters. On the other hand, the reduction of the silicon fin height showed more interesting results. Despite that the standard device with smaller fin height presented a lower intrinsic voltage gain performance when compared to the reference device, when implementing strain it supersedes the reference device and presented an enhancement in the intrinsic voltage gain over the standard one up to 8 %, larger than the 5.1 % obtained for the reference device. © 2011 IEEE.
- Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs(2012-10-04) PERIN, A. L.; Renato GiacominiThe best-explored integrated magnetic field sensors are built with planar IC technologies, which do not allow 3D sensing in standard fabrication processes due to their bi-dimensional nature. Unlike planar devices, FinFETs can be used to sense magnetic fields in any direction. This work proposes and evaluates the use of FinFETs as magnetic sensors. The sensibility of FinFET differential arrays to lateral and vertical magnetic fields is quantified. This work also proposes the L-shaped gate, to improve the sensor performance. © 2012 IEEE.