Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
Navegar
42 resultados
Resultados da Pesquisa
- Wearable large-area touch sensor: Design, simulation and experimental results(2019-08-05) PESSOA, P. S.; Renato Giacomini; BORELLI, C.; BUHLER, R. T.© 2019 IEEE.This work describes a wearable large-area touch sensor, which has been developed for healthcare purpose. The created model grants real-time response of an individual that touches the fabric, allowing its use as cloth. One of the main goals achieved is the creation of a fabric sensor with flexibility and satisfying humidity transportation levels. Besides the sensor itself a digital system was designed to read sensor information and provide data on the position and intensity of the touch. Furthermore, the developed Simulink model allows accurate simulation of the elaborated sensor, with many trimming tools and adjusts.
- Analog parameters of strained non-rectangular triple gate FinFETs(2010-01-05) BÜHLER, Rudolf Theoderich; Renato Giacomini; MARTINO, J. A.The strained silicon technology together to the reduction of the temperature is studied in this paper on trapezoidal triple gate FinFETs, through three-dimensional numerical simulation, with particular focus on analog parameters. The comparison of the intrinsic voltage gain between the different trapezoidal fin shapes demonstrated that, although the strained silicon technology provided higher intrinsic voltage gain, the fin shape can have a major role in analog parameters, helping to improve those parameters under certain circumstances. Higher intrinsic voltage gains were obtained for strained devices with top fin width larger than bottom. ©The Electrochemical Society.
- Analysis and modelling of temperature effect on DIBL in UTBB FD SOI MOSFETs(2016-03-23) PEREIRA, A. S. N.; DE STREEL, G.; PLANES, N.; HAOND, M.; Renato Giacomini; FLANDRE, D.; KILCHYSKA, V.© 2016 IEEE.The Drain Induced Barrier Lowering (DIBL) behavior in Ultra-Thin Body and Buried oxide (UTBB) transistors is investigated in details in the temperature range up to 150°C, for the first time to the best of our knowledge. The analysis is based on experimental data, physical device simulation, compact model (SPICE) simulation and previously published models. Contrarily to MASTAR prediction, experiments reveal DIBL increase with temperature. Physical device simulations of different thin-film fully-depleted (FD) devices outline the generality of such behavior. SPICE simulations, with UTSOI DK2.4 model, only partially adhere to experimental trends. Several analytic models available in the literature are assessed for DIBL vs.Temperature prediction. Although being the closest to experiments, Fasarakis' model overestimates DIBL(T) dependence for shortest devices and underestimates it for upsized gate lengths frequently used in ULV (ultra-low-voltage) applications. This model is improved in our work, by introducing a temperature-dependent inversion charge at threshold. The improved model showed very good agreement with experimental data, with high gain in precision for the gate lengths under test.
- Reliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET(2021-01-05) BÔAS, A. C. V.; ALBERTON, S. G.; MEDINA, N. H.; AGUIAR, V. A. P.; MELO, M. A. A.; Roberto Santos; Renato Giacomini; CAVALCANTE, T. C.; VAZ, R. G.; JUNIOR E, C. F. P.; SEIXAS, L. E.; FINCO, S.; Marcilei Aparecida Guazzelli© 2021, Brazilian Microelectronics Society. All rights reserved.—In this work, measurements were taken to investigate the robustness of a GaN HEMT to Total Ionizing Dose (TID) by a60gmmax values are dependable of the dose rate.DVTH values due to the TID, in this device are independent of the dose rate and the radiation source. However, the DCo Source. These results will be compared with a previous X-ray based work. Therefore, we will be, primarily, comparing both radiation sources. The robustness was investigated through IDxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on-and off-state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Manly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the.
- Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments(2019-09-20) BOAS A. C. V.; DE MELO, M. A. A.; Roberto Santos; Renato Giacomini; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRO A.; Marcilei Aparecida GuazzelliThe COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from -50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.
- Filter-free color pixel sensor using gated PIN photodiodes and machine learning techniques(2022-02-05) JUNIOR J. B.; PEREIRA, A.; BÜHLER, Rudolf Theoderich; PERIN, A.; NOVO, C.; GALETI, M.; OLIVEIRA, J.; Renato Giacomini© 2021 Elsevier LtdThis work addresses the possibility of light wavelength discrimination, using a specially designed Lateral PIN Gated Photodiode and Machine Learning signal processing techniques. The devices were designed at FEI University using IBM BiCMOS 8HP 0.13 μm technology. The terminal gate of the lateral PIN photodiode controls the vertical depletion layer, in order to modulate the capture of the electron-hole pairs generated by different wavelengths along the intrinsic region. The collected data were organized in optical power classes with the corresponding cathode currents. The experimental characterization shows that the terminal gate voltage can be used to discriminate different incident colors. The simulation results allowed the acquisition of a complete dataset to apply machine learning techniques and classify the photodetector captured color. This technique can be extended to photosensors arrays and eliminate the organic color filters. The best result was obtained using the “Linear and Quadratic Discriminant” algorithms, with the average accuracy of 92.46% and 96.82%, respectively.
- Sidewall angle influence on the FinFET analog parameters(2007-09-06) Renato Giacomini; MARTINO, J. A.; Marcelo Antonio PavanelloThe width variations along the vertical direction, due to process limitations, that appear in some fabricated FinFETs lead to non-rectangular cross-sectional shapes. One of the most frequent shapes is the trapezoidal (inclined sidewalls). These geometry variations may cause some changes in the device electrical characteristics. This work analyses the influence of the sidewall inclination angle on analog parameters, such as voltage gain, transconductance, output conductance, threshold voltage and also on the corner effects, through 3-D numeric simulation. © The Electrochemical Society.
- Non-vertical sidewall angle influence on triple-gate FinFETs corner effects(2007-05-11) Renato Giacomini; MARTINO J. A.Some fabricated FinFET devices present width variations along the vertical direction due to fabrication process limitations. These variations lead to non-rectangular cross-section shapes. One of the most frequent shapes is the trapezoidal (plane and inclined sidewalls). Another identified phenomenon in multiple-gate devices such as FinFETs is the corner effect, which occurs due to the overlapping of the influences of two gate planes near the device corners. This paper addresses the variation of the corner effect as a function of the sidewall inclination angle, through 3-D numeric simulation. A set of devices of several inclination angles and body doping levels were simulated. The corner effect depends on the inclination angle, specially for higher doping levels. © The Electrochemical Society.
- From micro to nano FinFETs: The impact of channel-shape on analog parameters(2009-12-11) BÜHLER, Rudolf Theoderich; Renato Giacomini; Marcelo Antonio Pavanello; MARTINO, J. A.
- Fin shape influence on the analog performance of standard and strained MuGFETs(2010-10-14) BÜHLER, Rudolf Theoderich; MARTINO, J. A; AGOPIAN, P. G. D.; Renato Giacomini; SIMOEN, E.; CLAEYS, C.