Artigos

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Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation
(2012-03-17) DE SAOUZA, M. A. S.; CLAEYS, C.; Rodrido Doria; Marcelo Antonio Pavanello; SIMOEN, E.
This work presents a study of the influence of mechanical stress on the low frequency noise in planar SOI transistors operating in saturation. Several channel lengths were measured, and the results show a reduction of the low frequency noise for strained devices independent of the channel length, and this reduction is more effective for smaller channel lengths. © 2012 IEEE.
Analog performance of submicron GC SOI MOSFETs
(2012-03-17) NEMER J. P.; Michelly De Souza; Marcelo Antonio Pavanello; FLANDRE, D.
This paper aims to demonstrate the performance of GC SOI MOSFET devices in comparison to standard SOI MOS transistors, comparing the improvements achieved by the adoption of the GC architecture in a submicron fully depleted SOI technology varying the channel length. The results obtained by two-dimensional numerical simulations show that the best improvement is obtained when the length of lightly doped region length is approximately 100 nm, independently of the total channel length. © 2012 IEEE.