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URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798

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Periódico: search.filters.ispartof.33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018Assunto: search.filters.subject.Nanowire transistors

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    Artigo de evento 0 Citação(ões) na Scopus
    Low-frequency noise investigation in long-channel fully depleted inversion mode n-type SOI nanowire
    (2018-08-27) MOLTO, A. R.; PAZ, B. C.; CASSE, M.; BARRAUD, S.; REIMBOLD, G.; VINET, M.; FAYNOT, O.; Marcelo Antonio Pavanello
    This work presents a Low-Frequency Noise (LFN) investigation in fully depleted n-type Silicon-On-Insulator (SOI) nanowire transistors working in linear region with VDS = 50mV. Long-channel devices of 1μ {m and 10μ {m are evaluated. A wide range of fin width is considered in the LFN analysis, from 15nm up to 105nm. The results showed a flicker noise (1/FF) behavior and a decrease of normalized noise SID/IDs2 with gate voltage overdrive increase for frequencies bellow 500Hz. Above this frequency, it was possible to see that generation and recombination noise with 1/f2 decay overlaps the flicker noise, becoming the predominant noise source. The cut-off frequency increases with gate voltage overdrive while the gamma exponent decreases. Gamma reduces from 1.3 to 0.9 and from 0.95 to 0.65 for devices with channel length of 1 μ {m and 10μ {m, respectively. A major noise variation of about one order of magnitude with gate voltage overdrive increase was observed in devices of 1 μ {m long in comparison to channel length of 10μ {m. The devices showed weak noise dependence on fin width due to mobility decrease as nanowires become narrower.
  • N/D
    Artigo de evento 5 Citação(ões) na Scopus
    Experimental analysis of self-heating effects using the pulsed IV method in junctionless nanowire transistors
    (2018-08-27) BERGAMASHI, F. E.; MARINIELLO, G.; BARRAUD, S.; Marcelo Antonio Pavanello
    This paper discusses the occurrence of self-heating in Junctionless Nanowire Transistors, observed through drain current degradation in the transient regime. The analysis is made by performing experimental measurements using the Pulsed IV method in transistors with varied dimensions. It is shown that the junctionless nanowire's susceptibility to self-heating is not high enough to significantly affect the transistor's characteristics, where for all cases current degradation lower than 4.5% is seen.