Repositório do Conhecimento Institucional do Centro Universitário FEI
 

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URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798

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20152

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Periódico: search.filters.ispartof.SBMicro 2015 - 30th Symposium on Microelectronics Technology and DevicesAssunto: search.filters.subject.Channel length

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
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    Artigo de evento 1 Citação(ões) na Scopus
    Analytical compact model for triple gate junctionless MOSFETs
    (2015-10-13) HERRERA, F. A.; CERDEIRA, A.; PAZ, B. C.; ESTRADA, M.; Marcelo Antonio Pavanello
    A new compact analytical model for triple gate junctionless transistors JLT is presented considering the capacitances when the fin height is reduced. For its calculation, the capacitance is separated into gate and silicon height capacitance. On the modeling side, threshold voltage, drain current model and short channel effects are modeled considering the influence of variable fin height. Based on our previous developed analytical model for 2D devices, which neglects the fin height effects, a 3D analytical compact model was developed including short channel effects. The 3D model presented is useful for modeling silicon triple gate junctionless transistors. The model validation is done by simulations varying the fin height and channel length.
  • N/D
    Artigo de evento 1 Citação(ões) na Scopus
    On the origin of low-frequency noise of submicron Graded-Channel fully depleted SOI nMOSFETs
    (2015-08-31) MOLTO, A. R.; Rodrigo Doria; Michelly De Souza; Marcelo Antonio Pavanello
    This paper deals with the Low-Frequency Noise (LFN) behavior of submicron Graded-Channel SOI nMOSFETs, fabricated in a 150 nm Technology from Oki Semiconductors as a continuation from previous works, looking at the noise sources of these devices. The effects of channel length reduction and gate bias dependence on the LFN of devices biased in linear regime are investigated. The effective trap density and the KF constant, which can be used in BSIM SPICE-like models, are determined.