Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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7 resultados
Resultados da Pesquisa
- Analysis of Variability in Transconductance and Mobility of Nanowire Transistors(2022-08-22) SILVA, L. M. B. DA; Marcelo Antonio Pavanello; CASSE, M.; BARRAUD, S.; VINET, M.; FAYNOT, O.; Michelly De Souza© 2022 IEEE.This work presents a comparison between the variability in junctionless nanowire transistors and inversion-mode nanowire transistors, looking at the transconductance, low-field mobility, linear and quadratic mobility degradation coefficients. To extract these parameters, the Y-Function method has been used. The obtained results shows differences in mobility and transconductance matching coefficients, indicating that mobility influence is not the only source of transconductance variation.
- Experimental Comparison of Junctionless and Inversion-Mode Nanowire MOSFETs Electrical Properties at High Temperatures(2022-08-22) PRATES, R. R.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOT, O.; Marcelo Antonio Pavanello© 2022 IEEE.This work aims to present the electrical properties of junctionless and inversion-mode nanowires MOSFETs in the temperature range from 300 K to 580 K. Devices with different fin widths are compared. The comparison is performed using experimental data looking for some of the fundamental electrical parameters of these transistors such as threshold voltage, inverse subthreshold slope, current, and carrier mobility over the temperature.
- Variability Modeling in Triple-Gate Junctionless Nanowire Transistors(2022-01-05) TREVISOLI, R.; Marcelo Antonio Pavanello; Rodrigo Doria; CAPOVILLA, C.E.; BARRAUD, S.; Michelly De SouzaIEEEThis work aims at proposing an analytical model for the variability of the threshold voltage and drain current in junctionless nanowire transistors. The model is continuous in all operation regions and has been validated through Monte Carlo simulations using a physically based drain current model and 3-D numerical simulations. A discussion about the influences of each variability source based on the proposed model is carried out. Finally, the modeled results are compared to the experimental data for a fully physical validation.
- Pragmatic evaluation of fin height and fin width combined variation impact on the performance of junctionless transistors(2022-01-05) RIBEIRO, T. A.; CERDEIRA, A.; ESTRADA, M.; BARRAUD, S.; Marcelo Antonio PavanelloThis work performs a pragmatic evaluation of the different junctionless devices architectures with channel lengths down to 30 nm on their electrical characteristics. By adopting multiple combinations between the fin height (HFIN) and the fin width (WFIN), chosen from the range of published data in the literature, the devices will operate from double-gate (FinFET like) mode towards to nanowire mode. Additionally, junctionless transistors with and without additional doping at the drain and source extensions were studied. Experimentally calibrated 3D TCAD simulations are used to allow for the study of these several combinations. Results show that for long-channel devices the best performance is obtained for tall and narrow fins, leading to the highest on-to-off current ratio (ION/IOFF) and the smallest values of subthreshold swing and DIBL. On the other hand, for short channel devices, independently of the doping level of the extensions, the best results are found for short HFIN and narrow WFIN, leading to the smaller values of subthreshold swing and DIBL, with a high ION/IOFF ratio. However, the use of doped extensions degrades the overall device performance of short-channel junctionless devices as will be demonstrated.
- From double to triple gate: Modeling junctionless nanowire transistors(2015-03-18) PAZ, B. C.; Marcelo Antonio Pavanello; CASSE, M.; BARRAUD, S.; REIMBOLD, G.; FAYNOT, O.; AVILA-HERRERA, F.; CERDEIRA, A.This paper presents a continuous, physically and charge-based new model for triple gate junctionless nanowire transistors (3G JNT). The presented model was evolved from a previous one designed for double gate junctionless transistors (2G JNT). The capacitance coupling and the internal potential changing from 2G to 3G JNTs are considered. The model validation is performed through both numerical simulation and experimental measurements for long and short channel devices.
- Influence of Fin Width Variation on the Electrical Characteristics of n-Type Junctionless Nanowire Transistors at High Temperatures(2020-09-05) RIBEIRO, T. A.; BARRAUD, S.; BERGAMASCHI, F. E.; Marcelo Antonio PavanelloThis work studied the effects of the fin width variation on Silicon-on-Insulator Junctionless Nanowire Transistors (JNTs) working in the temperature range of 300K to 500K. The effects of the temperature on the measured drain current, and gate capacitance, and on the extracted electrical parameters such as the threshold voltage, the subthreshold slope and the electron mobility were analyzed. Results show that JNTs with larger fin width may present better carrier mobility at a higher temperature than narrow ones as the degradation due to phonon scattering is decreased and the impurity scattering becomes more relevant. It is demonstrated that JNTs with narrow fin width show higher phonon scattering and higher mobility variation with the temperature than wider ones.
- Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures(2021-11-21) RIBEIRO, T. A.; BERGAMASCHI, F.E.; BARRAUD, S.; Marcelo Antonio PavanelloThis work studied the effects of the fin width variation on Silicon-on-Insulator Junctionless Nanowire Transistors (JNTs) working in the temperature range of 300 K to 500 K. The effects of the temperature on the measured drain current and gate capacitance, and on the extracted electrical parameters such as the threshold voltage, the subthreshold slope, and the electron mobility were analyzed. Results show that JNTs with larger fin width may present better carrier mobility at a higher temperature than narrow ones as the degradation due to phonon scattering is decreased and the impurity scattering becomes more relevant. It is demonstrated that JNTs with narrow fin width show higher phonon scattering and higher mobility variation with the temperature than wider ones.