Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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3 resultados
Resultados da Pesquisa
- Study of the drain leakage current behavior in circular gate SOI nMOSFET using 0.13μm SOI CMOS technology at high temperatures(2007) ALMEIDA, L. M.; BELLODI, M.It is presented numerical tridimensional simulations results concerning to the evolution of the drain leakage current behavior in Circular Gate SOI nMOSFETs operating from room temperature up to 573K. The results show that the leakage current behavior depends strongly on the channel length. Also, it was observed that the leakage current density distribution is non uniform along the silicon film thickness and it depends on the channel length and changes as the temperature goes up. © The Electrochemical Society.
- Influence of the N-type FinFET width on the zero temperature coefficient(2007-09-07) BELLODI, M.; MARTINO, J. A.; CAMILO, L. M.; SIMOEN, E.; CLAEYS, C.This paper presents the influence of the Fin width dimension on the Zero Temperature Coefficient (ZTC) behavior for devices operating at high temperatures (from room temperature up to 573K). Besides this, a simple analytical model is presented in order to describe the ZTC behavior as the temperature increases. Three-dimensional simulations are carried out and compared with experimental results to support the interpretation presented along this work. © The Electrochemical Society.
- Simple analytical model to study the ZTC bias point in FinFETs(2007-05-11) BELLODI, M.; CAMILLO, L. M.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.In this work we present a simple analytical model to study the Zero Temperature Coefficient (ZTC) bias point in FinFETs operating from room temperature up to 573 K. Three-dimensional simulations are carried out and compared with experimental results to qualify the results. © The Electrochemical Society.