Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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5 resultados
Resultados da Pesquisa
- Reliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET(2021-01-05) BÔAS, A. C. V.; ALBERTON, S. G.; MEDINA, N. H.; AGUIAR, V. A. P.; MELO, M. A. A.; Roberto Santos; Renato Giacomini; CAVALCANTE, T. C.; VAZ, R. G.; JUNIOR E, C. F. P.; SEIXAS, L. E.; FINCO, S.; Marcilei Aparecida Guazzelli© 2021, Brazilian Microelectronics Society. All rights reserved.—In this work, measurements were taken to investigate the robustness of a GaN HEMT to Total Ionizing Dose (TID) by a60gmmax values are dependable of the dose rate.DVTH values due to the TID, in this device are independent of the dose rate and the radiation source. However, the DCo Source. These results will be compared with a previous X-ray based work. Therefore, we will be, primarily, comparing both radiation sources. The robustness was investigated through IDxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on-and off-state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Manly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the.
- Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments(2019-09-20) BOAS A. C. V.; DE MELO, M. A. A.; Roberto Santos; Renato Giacomini; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRO A.; Marcilei Aparecida GuazzelliThe COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from -50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.
- Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment(2017-03-05) GALEMBECK, E. H.S.; RENAUX, C.; FLANDRE, D.; FINCO, S.; Salvador GimenezThis paper describes an experimental comparative study between the silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) field effect transistors (MOSFETs) implemented with the octagonal gate geometries and their typical rectangular counterparts operating in high-temperature conditions. The 1 m fully depleted SOI complementary metal-oxide semiconductor technology was employed to manufacture the devices. We observe that the octagonal layout style for MOSFETs is capable of maintaining its better electrical performance (for 573 K: a reduction of the leakage drain current of 65%, an increase of 159% in the saturation drain current, and an increase of 175% in the unit voltage gain frequency) in comparison to the standard rectangular counterpart. This happens because the longitudinal corner effect and parallel connection of MOSFETs with different channel lengths effect continue to function at high temperatures. Therefore, the octagonal layout style can be considered as an alternative hardness-by-design approach to boost the electrical performance of n-type SOI MOSFETs in high-temperature environments, without causing any extra burden for any current planar SOI MOSFET manufacturing process.
- Ionizing radiation hardness tests of GaN HEMTs for harsh environments(2021-01-05) VILAS BOAS, ALEXIS C.; MELO, MARCO ANTONIO ASSIS DE; Roberto Santos; Renato Giacomini; MEDINA N. H.; SEIXA, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; Marcilei Aparecida GuazzelliThe COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.
- Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs(2019) SEIXAS, LUIS E.; GONCALVEZ, O. L.; VAZ, R. G.; TELLES, A. C. C.; FINCO, S.; GIMENEZ, S. P.