Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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3 resultados
Resultados da Pesquisa
- Analog behavior of submicron graded-Channel SOI MOSFETs varying the channel length, doping concentration and temperature(2013-05-16) NEMER, J. P.; Michelly De Souza; FLANDRE, D.; Marcelo Antonio PavanelloIn this paper the analog performance of Graded-Channel (GC) SOI nMOSFETs with deep submicrometer channel length is presented. Experimental data of GC transistors fabricated in an industrial 150 nm fully-depleted SOI technology from OKI Semiconductors were used to adjust the two-dimensional numerical simulations, in order to analyze the devices analog behavior by extrapolating their physical parameters. The obtained results show that the larger intrinsic voltage gain improvement occurs when the length of the lightly doped region is approximately 100 nm regardless the total channel length, doping concentration and temperature. © The Electrochemical Society.
- Analog performance improvement of self-cascode structures composed by UTBB transistors using back gate bias(2015-11-20) Rodrido Doria; TREVISOLI, R.; Michelly De Souza; Marcelo Antonio Pavanello; FLANDRE, D.This paper explores the use of the back gate bias to enhance the analog performance of self-cascode structures composed by 25nm-long UTBB SOI MOSFETs. It is shown, for the first time, that the use of back gate bias can improve the intrinsic voltage gain by 15 dB, making it larger than the one presented by a 50nm-long single device.
- Use of back gate bias to improve the performance of n- and p-type UTBB transistors-based self-cascode structures applied to current mirrors(2017-10-10) Rodrido Doria; TREVISOLI, R.; Michelly De Souza; Marcelo Antonio Pavanello; FLANDRE, D.This paper aims at demonstrating, for the first time, the use of back bias to improve the analog performance of current mirrors composed by self-cascode structures with 25 nm-long n- and p-type UTBB SOI MOSFETs. The use of back gate bias has shown to enhance the intrinsic gain of p-type devices by about 7 dB, making it higher than the one from a single device with equivalent channel length whereas the mirroring precision has shown to be improved by 20 % with respect to single devices.