Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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4 resultados
Resultados da Pesquisa
- Cross-coupling effects in common-source current mirrors composed by UTBB transistors(2022) JOSÉ DA COSTA, F.; TREVISOLI, R.; Rodrigo Doria© 2022 Elsevier LtdThis work performs an analysis of the cross-coupling effects influence on the performance of current mirrors composed by advanced UTBB SOI MOSFETs through 3D numerical simulations validated to experimental data of single devices. It is shown the presence of a capacitive coupling acting in the system, which can be demonstrated through the threshold voltage reduction at small distances between devices. Additionally, the temperature rise in the system due to the thermal coupling provokes a decrease in the input current as the devices become closer to each other. This is responsible for an increase of 3 % on ID2/ID1 ratio when the devices are biased at the same time and when the distance between them is lowered to 100 nm.
- An analytical model for the non-linearity of triple gate SOI MOSFETs(2011-01-05) Rodrigo Doria; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.; Marcelo Antonio PavanelloThis work proposes a physically-based analytical model for the non-linearity of Triple-Gate MOSFETs. The model describes the second order harmonic distortion (HD2), usually the major non-linearity source, as a function of the device dimensions, the series resistance, the low field mobility and the mobility degradation factor (θ). The model was applied to transistors of different channel lengths and fin widths and allowed to conclude that θ is the parameter which most contributes for the increase of HD2. The model was validated for both unstrained and strained FinFETs. ©The Electrochemical Society.
- Analysis of harmonic distortion of asymmetric self-cascode association of SOI nMOSFETs operating in saturation(2014-01-20) D'OLIVEIRA, L. M.; Rodrigo Doria; Marcelo Antonio Pavanello; Michelly De Souza; FLANDRE, D.This paper presents an experimental analysis of the harmonic distortion of asymmetric self-cascode (A-SC) association of SOI transistors. This goal is achieved by comparing the A-SC to the symmetric self-cascode (S-SC) configuration with different channel lengths. The non-linearity data have been obtained by applying the Integral Function Method to experimental measurements, for the evaluation of the total and third-order harmonic distortion. The results show that the asymmetric self-cascode provides lower total harmonic distortion than S-SC for all studied channel length associations. If a target distortion level is fixed, the A-SC enables an increase of input signal amplitude. On the other hand, smaller input signal amplitude and distortion are verified in the A-SC when fixing the output amplitude.
- Analysis of the Thermal Properties of Self-Cascode Structures Composed by UTBB Transistors(2020) COSTA, F. J.; TREVISOLI, R.; Michelly De Souza; Rodrigo Doria© 2020 IEEE.The focus of this work is to perform an analysis of the thermal properties of the Self-Cascode (SC) structure composed by advanced UTBB SOI MOSFETs under a selected set of back gate biases, through 2D numerical simulations. In this work, it could be observed that the SC structure presents a 50 % lower thermal resistance in comparison with a single device with similar channel length. The application of a back gate bias of 2 V to the drain-sided device or -2 V to the source-sided devices of the SC has shown a decrease of 10-16 % in the thermal resistance.