Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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6 resultados
Resultados da Pesquisa
- Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions(2021-01-05) GONZALEZ, C. J.; MACHADO, D. N.; VAZ, R. G.; VILAS BOAS, A. C.; GONLALEZ, O. L.; PUCHNER, H.; ADDED, N.; MACCHIONE, E. L. A.; AGUIAR, V. A. P.; KASTENSMIDT, F. L.; MEDINA, N. H.; Marcilei Aparecida Guazzelli; BALEN, T. R.© 2021, Brazilian Microelectronics Society. All rights reserved.— This work presents results of three distinct radiation tests performed upon a fault tolerant data acquisition system comprising a design diversity redundancy technique. The first and second experiments are Total Ionizing Dose (TID) essays, comprising gamma and X-ray irradiations. The last experiment considers single event effects, in which two heavy ion irradiation campaigns are carried out. The case study system comprises three analog-to-digital converters and two software-based vot-ers, besides additional software and hardware resources used for controlling, monitoring and memory manage-ment. The applied Diversity Triple Modular Redundancy (DTMR) technique, comprises different levels of diversity (temporal and architectural). The circuit was designed in a programmable System-on-Chip (PSoC), fabricated in a 130nm CMOS technology process. Results show that the technique may increase the lifetime of the system under TID if comparing with a non-redundant implementation. Considering the heavy ions experiments the system was proved effective to tolerate 100% of the observed errors originated in the converters, while errors in the processing unit present a higher criticality. Critical errors occur-ring in one of the voters were also observed. A second heavy ion campaign was then carried out to investigate the voters reliability, comparing the the dynamic cross section of three different software-based voter schemes im-plemented in the considered PSoC.
- Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC(2015-07-13) TAMBARA, L. A.; KASTENSMIDT, F. L.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; Marcilei Aparecida Guazzelli© 2015 IEEE.The recent advance of silicon technology has allowed the integration of complex systems in a single chip. Nowadays, Field Programmable Gate Array (FPGA) devices are composed not only of the programmable fabric but also by hard-core processors, dedicated processing block interfaces to various peripherals, on-chip bus structures and analog blocks. Among the latest released devices of this type, this work focuses in the 28 nm Xilinx Zynq-7000 All Programmable SoC (APSoC). While not immune to the radiation environment in space, the Zynq-7000 seems to be very attractive for the aerospace sector due to its high computational power capability and low-power consumption. In this work, results from heavy ions testing for Zynq-7000 are presented. The experiments were performed in a Brazilian facility located at the University of São Paulo, Brazil.
- Analyzing the influence of the angles of incidence on SEU and MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA(2017) TONFAT, J.; KASTENSMIDT, F. L.; ARTOLA, L.; HUBERT, G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; Marcilei Aparecida Guazzelli© 2016 IEEE.This work highlights the impact of low LET heavy ions particles on the reliability of 28-nm Bulk SRAM cells from 4rtix-7 FPGA. Radiation tests showed significant differences in he MBU cross section of configuration (CRAM) and BRAM memory cells under various angles of incidence. Radiation results re compared with simulations at transistor level by using the ioft error tool, MUSCA SEP3 (MUlti-SCAle Single Event henomenon Prediction Platform) coupled with circuit imulations with the aim to analyze the differences of upset ensitivity as a function of layout SRAM. This analysis leads to etermine the correct layout and technology used in the tested PGA. By using the detailed classification of MBU events, it is ossible to analyze the effectiveness of correction mechanisms of he FPGA configuration memory.
- Analyzing the Influence of using Reconfiguration Memory Scrubber and Hardware Redundancy in a Radiation Hardened FPGA under Heavy Ions(2018-09-05) OLIVEIRA, A.B. DE; BENEVENUT,I F.; BENITES, L. A. C.; RODRIGUES, G. S.; KASTENSMIDT, F. L.; ADDED, N.; AGUIAR, V. A. P.; MEDINA, N. H.; Marcilei Aparecida Guazzelli; DEBARGE, C.© 2018 IEEE.This work investigates the influence of using the built-in configuration memory scrubber and triple modular hardware redundancy in the cross section of a radiation-hardened SRAM-based FPGA from NanoXplore. Different designs versions are investigated under heavy ions for the occurrence of transient errors, failures, and timeouts. The calculated dynamic cross-sections are in agreement with the expected order of magnitude of radiation hardened SRAM-based FPGAs. Results show that the most reliable configuration is using DSPs for the operational logic and applying full design redundancy combined with scrubbing.
- Evaluating Soft Core RISC-V Processor in SRAM-Based FPGA under Radiation Effects(2020-07-05) OLIVEIRA, A. B.; TAMBARA, L. A.; BENEVENUTI, F.; BENITES, L. A. C.; ADDED, N.; AGUIAR, V. A. P.; MEDINA, N. H.; Marcilei Aparecida Guazzelli; KASTENSMIDT, F. L.© 1963-2012 IEEE.This article evaluates the RISC-V Rocket processor embedded in a Commercial Off-The-Shelf (COTS) SRAM-based field-programmable gate array (FPGA) under heavy-ions-induced faults and emulation fault injection. We also analyze the efficiency of using mitigation techniques based on hardware redundancy and scrubbing. Results demonstrated an improvement of $3\times $ in the cross section when scrubbing and coarse grain triple modular redundancy are used. The Rocket processor presented analogous sensitivity to radiation effects as the state-of-the-art soft processors. Due to the complexity of the system-on-chip, not only the Rocket core but also its peripherals should be protected with proper solutions. Such solutions should address the specific vulnerabilities of each component to improve the overall system reliability while maintaining the trade-off with performance.
- Failure Mechanism and Sampling Frequency Dependency on TID Response of SAR ADCs(2021) GONZALEZ, C. J.; COSTA, B. L.; MACHADO, D. N.; VAZ, R. G.; BOAS, A. C. V.; GONÇALEZ, O. L.; PUCHNER, H.; KASTENSMIDT, F. L.; MEDINA, N. H.; Marcilei Aparecida Guazzelli; BALEN, T. R.© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.This paper describes the main failure mechanism of charge redistribution Successive Approximation Register (SAR) Analog-to-Digital Converters (ADCs) under radiation. Results of two different radiation experiments (gamma and X-ray) each considering two identical 130nm, 8-bit SAR ADCs, operating with distinct sampling rates, showed that lower sampling frequencies cause the converters to fail at lower accumulated dose, while increasing the sampling frequency increases the converters robustness to radiation. A SPICE model of a SAR ADC is used to simulate radiation induced leakage effects, considering the same technology node and operating conditions of the tested converters. A very good agreement between simulation results and gamma irradiation experimental data allows us to explain the main failure mechanism, which is related to leakage in switches connected to the programmable capacitor array of the internal DAC of the converter.