Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1059
Title: Advantages of the Graded-Channel SOI FD MOSFET for Application as a Quasi-Linear Resistor
Authors: CERDEIRA, Antonio
ALEMÁN, Miguel
PAVANELLO, Marcelo A.
MARTINO, João Antonio
VANCAILLIE, Laurent
FLANDRE, Denis
Issue Date: 2005
Journal: I.E.E.E. Transactions on Electron Devices
ISSN: 0018-9383
Citation: CERDEIRA, Antonio; ALEMÁN, Miguel; PAVANELLO, Marcelo A.; MARTINO, João Antonio; VANCAILLIE, Laurent; FLANDRE, Denis. Advantages of the Graded-Channel SOI FD MOSFET for Application as a Quasi-Linear Resistor. I.E.E.E. Transactions on Electron Devices, v. 52, n. 5, p. 967-972, 2005.
Access Type: Acesso Aberto
DOI: 10.1109/TED.2005.846327
URI: https://repositorio.fei.edu.br/handle/FEI/1059
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