Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1078
Title: Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs
Authors: MUCI, Juan
LATORRE-REY, A. D.
GARCIA-SANCHEZ, Francisco
LUGO-MUÑOZ, D.
ORTIZ-CONDE, Adelmo
HO, C. S.
LIOU, J. J.
PAVANELLO, Marcelo A.
TREVISOLI, Renan Doria
Issue Date: 2010
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: MUCI, Juan; LATORRE-REY, A. D.; GARCIA-SANCHEZ, Francisco; LUGO-MUÑOZ, D.; ORTIZ-CONDE, Adelmo; HO, C. S.; LIOU, J. J.; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria. Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 5, n. 2, p. 103-109, 2010.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1078
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