Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1085
Title: 3D simulation of triple-gate MOSFETs with different mobility regions
Authors: CONDE, Jorge
CERDEIRA, Antonio
PAVANELLO, Marcelo A.
PAVANELLO, M. A.
KILCHYTSKA, V.
FLANDRE, Denis
Issue Date: 2011
Journal: Microelectronic Engineering
ISSN: 0167-9317
Citation: CONDE, Jorge; CERDEIRA, Antonio; PAVANELLO, Marcelo A.; PAVANELLO, M. A.; KILCHYTSKA, V.; FLANDRE, Denis. 3D simulation of triple-gate MOSFETs with different mobility regions. Microelectronic Engineering, v. 88, n. 7, p. 1633-1636, 2011.
Access Type: Acesso Aberto
DOI: 10.1016/j.mee.2011.03.013
URI: https://repositorio.fei.edu.br/handle/FEI/1085
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