Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1105
Title: The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime
Authors: DORIA, Rodrigo Trevisoli
TREVISOLI, Renan Doria
DE SOUZA, Michelly
CUETO, Magali Estrada
CERDEIRA, Antonio
Pavanello, Marcelo Antonio
Issue Date: 2014
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: DORIA, Rodrigo Trevisoli; TREVISOLI, Renan Doria; DE SOUZA, Michelly; CUETO, Magali Estrada; CERDEIRA, Antonio; Pavanello, Marcelo Antonio. The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 9, n. 2, p. 110-117, 2014.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1105
Appears in Collections:Artigos

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