Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1109
Title: Temperature dependence of the electrical characteristics up to 370K of amorphous In-Ga-ZnO thin film transistors
Authors: ESTRADA, M.
RIVAS, M.
GARDUÑO, I.
AVILA-HERRERA, F.
CERDEIRA, A.
PAVANELLO, M.
MEJIA, I.
QUEVEDO-LOPEZ, M.A.
Issue Date: 2016
Journal: Microelectronics and Reliability
ISSN: 0026-2714
Citation: ESTRADA, M.; RIVAS, M.; GARDUÑO, I.; AVILA-HERRERA, F.; CERDEIRA, A.; PAVANELLO, M.; MEJIA, I.; QUEVEDO-LOPEZ, M.A.. Temperature dependence of the electrical characteristics up to 370K of amorphous In-Ga-ZnO thin film transistors. Microelectronics and Reliability, v. 56, p. 29-33, 2016.
Access Type: Acesso Aberto
DOI: 10.1016/j.microrel.2015.10.015
URI: https://repositorio.fei.edu.br/handle/FEI/1109
Appears in Collections:Artigos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.