Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1126
Title: Study of silicon n- and p-FET SOI nanowires concerning analog performance down to 100K
Authors: PAZ, Bruna Cardoso
CASSÉ, MIKAËL
BARRAUD, SYLVAIN
REIMBOLD, GILLES
VINET, MAUD
FAYNOT, OLIVIER
Pavanello, Marcelo Antonio
Issue Date: 2017
Journal: Solid-State Electronics
ISSN: 0038-1101
Citation: PAZ, Bruna Cardoso; CASSÉ, MIKAËL; BARRAUD, SYLVAIN; REIMBOLD, GILLES; VINET, MAUD; FAYNOT, OLIVIER; Pavanello, Marcelo Antonio. Study of silicon n- and p-FET SOI nanowires concerning analog performance down to 100K. Solid-State Electronics, v. 128, p. 60-66, 2017.
Access Type: Acesso Aberto
DOI: 10.1016/j.sse.2016.10.023
URI: https://repositorio.fei.edu.br/handle/FEI/1126
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