Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1130
Title: Back-Biased Undoped Nanowire-Based FETs in Silicon-On-Insulator Substrates with Nanometric Thicknesses
Authors: NEMER, Juliana P.
PUYDINGER, M.
DINIZ, José Alexandre
PAVANELLO, Marcelo A.
Issue Date: 2018
Journal: Journal of Nanoelectronics and Optoelectronics
ISSN: 1555-130X
Citation: NEMER, Juliana P.; PUYDINGER, M.; DINIZ, José Alexandre; PAVANELLO, Marcelo A.. Back-Biased Undoped Nanowire-Based FETs in Silicon-On-Insulator Substrates with Nanometric Thicknesses. Journal of Nanoelectronics and Optoelectronics, v. 13, p. 178-182, 2018.
Access Type: Acesso Restrito
DOI: 10.1166/jno.2018.2228
URI: https://repositorio.fei.edu.br/handle/FEI/1130
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