Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1148
Title: A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor
Authors: PERIN, A. L.
PEREIRA, A. S. N.
AGOPIAN, P. G. D.
MARTINO, J. A.
GIACOMINI, R.
Issue Date: 2012
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: PERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; GIACOMINI, R.. A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 7, n. 2, p. 100-106, 2012.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1148
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