An accurate closed-expression model for FinFETs parasitic resistance
Nenhuma Miniatura disponível
Citações na Scopus
2
Tipo de produção
Artigo
Data
2015
Autores
Pereira A.S.N.
Giacomini R.
Giacomini R.
Orientador
Periódico
Microelectronics Reliability
Título da Revista
ISSN da Revista
Título de Volume
Citação
NASCIMENTO, A. S.;PEREIRA, A. S. N.; GIACOMINI, R.. An accurate closed-expression model for FinFETs parasitic resistance. Microelectronics and Reliability, v. 55, p. 470-480, 2015.
Texto completo (DOI)
Palavras-chave
Resumo
© 2015 Elsevier Ltd. All rights reserved.A new closed-expression analytic model for parasitic resistance of FinFETs (Fin-Field-Effect-Transistors), which allows a fast estimation of this parasitic element, is proposed and evaluated in this work. The parasitic resistance is one of the most significant parameter for performance and reliability degradations in scaled devices. The model is based in the current distribution observed in three-dimensional simulations and is very accurate when compared to experimental data. The contact resistance was modeled using a variable impedance transmission line model, to approximate source and drain geometries to the real shapes of these regions. The model has a closed expression, without adjustment parameters. All results were compared with two previous models presented in literature, and the proposed model was the one which presented the best accuracy: percent errors below 10% for different source and drain doping concentrations, contact lengths, extension lengths, contact resistivity and fin widths.