An accurate closed-expression model for FinFETs parasitic resistance
N/D
Tipo de produção
Artigo
Data de publicação
2015
Texto completo (DOI)
Periódico
Microelectronics Reliability
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
Pereira A.S.N.
Giacomini R.
Orientadores
Resumo
© 2015 Elsevier Ltd. All rights reserved.A new closed-expression analytic model for parasitic resistance of FinFETs (Fin-Field-Effect-Transistors), which allows a fast estimation of this parasitic element, is proposed and evaluated in this work. The parasitic resistance is one of the most significant parameter for performance and reliability degradations in scaled devices. The model is based in the current distribution observed in three-dimensional simulations and is very accurate when compared to experimental data. The contact resistance was modeled using a variable impedance transmission line model, to approximate source and drain geometries to the real shapes of these regions. The model has a closed expression, without adjustment parameters. All results were compared with two previous models presented in literature, and the proposed model was the one which presented the best accuracy: percent errors below 10% for different source and drain doping concentrations, contact lengths, extension lengths, contact resistivity and fin widths.
Citação
NASCIMENTO, A. S.;PEREIRA, A. S. N.; GIACOMINI, R.. An accurate closed-expression model for FinFETs parasitic resistance. Microelectronics and Reliability, v. 55, p. 470-480, 2015.
Palavras-chave
Keywords
Device modeling; FinFET; Parasitic resistance
Assuntos Scopus
Contact resistivities; Current distribution; Device modeling; Fin field effect transistors; Parasitic resistances; Performance and reliabilities; Three dimensional simulations; Transmission line modeling