Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1152
Title: An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models
Authors: PEREIRA, A. S. N.
STREEL, G.
PLANES, N.
HAOND, M.
GIACOMINI, R.
FLANDRE, D.
KILCHYTSKA, V.
Issue Date: 2017
Journal: Solid-State Electronics
ISSN: 0038-1101
Citation: PEREIRA, A. S. N.; STREEL, G.; PLANES, N.; HAOND, M.; GIACOMINI, R.; FLANDRE, D.; KILCHYTSKA, V.. An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models. Solid-State Electronics, v. 128, n. 1, p. 67-71, 2017.
Access Type: Acesso Aberto
DOI: 10.1016/j.sse.2016.10.017
URI: https://repositorio.fei.edu.br/handle/FEI/1152
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