Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1305
Title: The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation
Authors: FINO, L. N. S.
Marcilei Aparecida Guazzelli da Silveira
Christian Renaux
FLANDRE, Denis
GIMENEZ, S. P.
Issue Date: 2015
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: FINO, L. N. S.; Marcilei Aparecida Guazzelli da Silveira; Christian Renaux; FLANDRE, Denis; GIMENEZ, S. P.. The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 10, n. 1, p. 43-48, 2015.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1305
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