Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1307
Title: Impact of Using the Octagonal Layout for SOI MOSFETs in High Temperature Environment
Authors: GIMENEZ, S. P.
GALEMBECK, E. H. S.
RENAUX, CHRISTIAN
FLANDRE, D
Issue Date: 2015
Journal: IEEE Transactions on Device and Materials Reliability
ISSN: 1530-4388
Citation: GIMENEZ, S. P.; GALEMBECK, E. H. S.; RENAUX, CHRISTIAN; FLANDRE, D. Impact of Using the Octagonal Layout for SOI MOSFETs in High Temperature Environment. IEEE Transactions on Device and Materials Reliability, v. 99, n. 1, p. 1-1, 2015.
Access Type: Acesso Aberto
DOI: 10.1109/TDMR.2015.2474739
URI: https://repositorio.fei.edu.br/handle/FEI/1307
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