Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1309
Title: Electrical behavior of the diamond layout style for MOSFETs in X-rays ionizing radiation environments
Authors: Gimenez, Salvador Pinillos
Alati, Daniel Manha
Issue Date: 2015
Journal: Microelectronic Engineering
ISSN: 0167-9317
Citation: Gimenez, Salvador Pinillos; Alati, Daniel Manha. Electrical behavior of the diamond layout style for MOSFETs in X-rays ionizing radiation environments. Microelectronic Engineering, v. 148, n. 1, p. 85-90, 2015.
Access Type: Acesso Aberto
DOI: 10.1016/j.mee.2015.09.001
URI: https://repositorio.fei.edu.br/handle/FEI/1309
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