Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1312
Title: Improving MOSFETs TID Tolerance through Diamond Layout Style
Authors: Luis Eduardo Seixas
GONCALVEZ, O. L.
SOUZA, R.
FINCO, SAULO
G., V. R.
Gabriel Augusto da Silva
GIMENEZ, S. P.
Issue Date: 2017
Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
ISSN: 1530-4388
Citation: Luis Eduardo Seixas; GONCALVEZ, O. L.; SOUZA, R.; FINCO, SAULO; G., V. R.; Gabriel Augusto da Silva; GIMENEZ, S. P.. Improving MOSFETs TID Tolerance through Diamond Layout Style. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 1, n. 1, p. 1-1, 2017.
Access Type: Acesso Aberto
DOI: 10.1109/TDMR.2017.2719959
URI: https://repositorio.fei.edu.br/handle/FEI/1312
Appears in Collections:Artigos

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