Improving MOSFETs' TID Tolerance Through Diamond Layout Style
N/D
Tipo de produção
Artigo
Data de publicação
2017
Texto completo (DOI)
Periódico
IEEE Transactions on Device and Materials Reliability
Editor
Texto completo na Scopus
Citações na Scopus
15
Autores
Seixas L.E.
Goncalez O.L.
Souza R.
Finco S.
Vaz R.G.
Da Silva G.A.
Gimenez S.P.
Orientadores
Resumo
© 2001-2011 IEEE.This letter describes an experimental comparative study of the total ionizing dose (TID) effects due to Co-60 gamma irradiation between hexagonal (Diamond) and conventional rectangular gates metal-oxide semiconductor field-effect transistors (MOSFETs), regarding the same bias conditions during irradiation. The transistors were manufactured by using the 350 nm commercial bulk complementary metal-oxide semiconductor (CMOS) integrated-circuits (ICs) technology. The innovative hexagonal gate layout proposal can reduce the parameter deviations of TID effects in MOSFETs in, approximately, 30%, 400%, and 100% in terms of the threshold voltage, leakage drain current, and subthreshold slope, respectively, regarding the standard MOSFET counterparts. Therefore, the Diamond MOSFET can be considered as a low-cost alternative device to be used in space CMOS ICs applications.
Citação
Luis Eduardo Seixas; GONCALVEZ, O. L.; SOUZA, R.; FINCO, SAULO; G., V. R.; Gabriel Augusto da Silva; GIMENEZ, S. P.. Improving MOSFETs TID Tolerance through Diamond Layout Style. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 1, n. 1, p. 1-1, 2017.
Palavras-chave
Keywords
Diamond MOSFET layout style; radiation hardened by design (RHBD); TID effects
Assuntos Scopus
Comparative studies; Complementary metal-oxide-semiconductor (CMOS) integrated circuit; MOS-FET; Parameter deviations; Radiation hardened by design; Subthreshold slope; TID effects; Total ionizing dose effects