Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1313
Title: Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
Authors: GALEMBECK, EGON H.S.
RENAUX, CHRISTIAN
FLANDRE, Denis
FINCO, SAULO
GIMENEZ, SALVADOR P.
Issue Date: 2017
Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
ISSN: 1530-4388
Citation: GALEMBECK, EGON H.S.; RENAUX, CHRISTIAN; FLANDRE, Denis; FINCO, SAULO; GIMENEZ, SALVADOR P.. Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 17, n. 1, p. 1-1, 2017.
Access Type: Acesso Aberto
DOI: 10.1109/tdmr.2017.2652729
URI: https://repositorio.fei.edu.br/handle/FEI/1313
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