Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1316
Title: Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs
Authors: SEIXAS, LUIS E.
GONCALVEZ, O. L.
VAZ, R. G.
TELLES, A. C. C.
FINCO, S.
GIMENEZ, S. P.
Issue Date: 2019
Journal: Journal of Materials Science: Materials in Electronics
ISSN: 1573-482X
Citation: SEIXAS, LUIS E.; GONCALVEZ, O. L.; VAZ, R. G.; TELLES, A. C. C.; FINCO, S.; GIMENEZ, S. P.. Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs. Journal of Materials Science: Materials in Electronics, v. 1, n. 1, p. 1-13, 2019.
Access Type: Acesso Aberto
DOI: 10.1007/s10854-019-00747-w
URI: https://repositorio.fei.edu.br/handle/FEI/1316
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